CHK8101a99F - 20W Power Bar
Operating Frequency (GHz)
14 @ 6
Saturated Power (W)
20
Bias (mA)
100
Bias (V)
50
Glin (dB) @Freq (GHz)
14 @ 6
PAE (%) @Freq (GHz)
60 @ 6
Market
Aerospace, Defense and Instrumentation
The CHK8101a99F is a 20W Gallium Nitride High Electron Mobility Transistor.
This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telecommunication.
It is developed on a 0.5µm gate length GaN HEMT technology on SiC substrate and is compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006
It is proposed in a bare die form and requires an external matching circuitry.
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