CHK5010-99F - 4W Power Transistor
Operating Frequency (GHz)
21.6 @ 6
Saturated Power (W)
4
Bias (mA)
50
Bias (V)
30
Glin (dB) @Freq (GHz)
21.6 @ 6
PAE (%) @Freq (GHz)
72 @ 6
Market
Aerospace, Defense and Instrumentation
The CHK5010-99F is a 4W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications. The circuit is manufactured with a GaN HEMT technology on SiC substrate. It is proposed in a bare die form and requires external matching circuitries.
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