CHK015AaQIA - 15W Power Packaged Transistor
Operating Frequency (GHz)
Up to 4
Saturated Power (W)
20
Bias (mA)
100
Bias (V)
50
Glin (dB) @Freq (GHz)
18 @ 2.9
PAE (%) @Freq (GHz)
55 @ 2.9
Market
Aerospace, Defense and Instrumentation
The CHK015AaQIA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor.
It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as radar and telecommunication.
The CHK015AaQIA is developed on a 0.5µm gate length GaN HEMT process. It requires an external matching circuitry.
It is proposed in low cost plastic package providing low parasitic and low thermal resistance.
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