Advanced information
CHA8362-EBB - 26.5-31GHz 20W GaN Monolithic High Power Amplifier in drop-in copper base package
Gain (dB)
24
Bias (mA)
330
Bias (V)
25
PAE (%)
28
RF Bandwidth (GHz) Min
26.5
RF Bandwidth (GHz) Max
31
Market
28-32GHz & VSAT Ka Chipset
The CHA8362-EBB is a packaged three stage High Power Amplifier operating between 26.5 and 31GHz and providing typically 20W of saturated output power associated to 28% of Power Added Efficiency. It exhibits 10W of linear power with -20dBc IMD3 at 10MHz bandwidth. This HPA is dedicated to SatCom and 5G applications and well suited for a wide range of microwave applications and systems. The circuit is manufactured on a robust GaN-on-SiC HEMT process and is available in a drop-in package with a copper base. Input & output are 50Ω matched.
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