New
CHA6682-98F - 24-27.5GHz 5W Power Amplifier
Gain (dB)
25
Sat. Output Power (dBm)
37
Bias (mA)
115
Bias (V)
20
IP3 (dBm)
-
P-1dB OUT (dBm)
-
PAE (%)
32 @ Psat
RF Bandwidth (GHz) Max
27.5
RF Bandwidth (GHz) Min
24
Market
23-26GHz Chipset
The CHA6682-98F is a three stage High Power Amplifier operating between 24 and 27.5GHz providing 5W of saturated output power with 32% of Power Added Efficiency. It includes a power detector. The amplifier exhibits more than 25dB small signal gain with a typical power supply of 20V/115mA quiescent current. This High Power Amplifier is dedicated to telecommunication applications and well suited for a wide range of microwave applications and systems.
The circuit is manufactured on a robust GaN on SiC HEMT process and is available as a bare die with BCB protection layer. The input and output are matched to 50Ω and integrate ESD RF protection.
The circuit is manufactured on a robust GaN on SiC HEMT process and is available as a bare die with BCB protection layer. The input and output are matched to 50Ω and integrate ESD RF protection.
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