CHA3666-FAB - 6-16GHz LNA
Gain (dB)
21
Gain Flatness (+/-dB)
1
Bias (mA)
80
Bias (V)
4
Noise Figure (dB)
1.8
P-1dB OUT (dBm)
17
RF Bandwidth (GHz) Max
16
RF Bandwidth (GHz) Min
6
Market
6-18GHz Chipset
The CHA3666-FAB is a two-stage self biased wide band monolithic Low Noise Amplifier.
The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is proposed in leadless surface mount hermetic metal ceramic 6x6mm² package. The overall power supply is of 4V/80mA.
The circuit is dedicated to space applications and also well suited for a wide range of microwave and millimetre wave applications and systems.
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