CHA3656-FAB - 5.8-16GHz LNA
Gain (dB)
20
Gain Flatness (+/-dB)
-
Bias (mA)
70
Bias (V)
3.3
Noise Figure (dB)
1.75
P-1dB OUT (dBm)
14.5
RF Bandwidth (GHz) Max
16
RF Bandwidth (GHz) Min
5.8
Market
6-18GHz Chipset
The CHA3656-FAB is a two-stage self-biased wide band monolithic Low Noise Amplifier.
It is dedicated to space communications and also well suited for a wide range of applications, such as C, X, Ku radar, test instrumentation and hi-rel applications.
The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is supplied in a surface mount hermetic package.
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