CHA2069-FAB - 16-32GHz LNA
Gain (dB)
22
Gain Flatness (+/-dB)
1
Bias (mA)
55
Bias (V)
4.5
Noise Figure (dB)
2.5
P-1dB OUT (dBm)
10
RF Bandwidth (GHz) Max
32
RF Bandwidth (GHz) Min
16
The CHA2069-FAB is a three-stage self‑biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is proposed in leadless surface mount hermetic metal ceramic 6x6mm² package. The overall power supply is of 4.5V/55mA. The circuit is dedicated to space applications and also well suited for a wide range of microwave and millimetre wave applications and systems.
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