New
CHA8618-99F - 6-18GHz HPA
Gain (dB)
33
Sat. Output Power (dBm)
42.5
Bias (mA)
1200
Bias (V)
20
IP3 (dBm)
-
P-1dB OUT (dBm)
-
PAE (%)
26 @ Psat
RF Bandwidth (GHz) Max
18
RF Bandwidth (GHz) Min
6
Market
6-18GHz Chipset
The CHA8618-99F is a monolithic GaN High Power Amplifier in the frequency band 6 18GHz with a control interface for fast switching. This driver provides 42.5 dBm of Output Power. The circuit exhibits a small signal gain of 33dB. The overall power supply is of 20V/1.2A (quiescent current).
It is designed for a wide range of applications, for military systems, such as electronic warfare, and test instrumentation.
The part is manufactured on robust GaN HEMT technology and is available as a bare die.
It is designed for a wide range of applications, for military systems, such as electronic warfare, and test instrumentation.
The part is manufactured on robust GaN HEMT technology and is available as a bare die.
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