Datasheet Download| Reference | RF Bandwidth (GHz) | Gain (dB) | IP3 (dBm) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||
The CHA8362-99F is a three stages High Power Amplifier operating between 26.5 and 31GHz and providing typically 25W of saturated output power associated to 30% of power added efficiency.
The typical power supply is 25V/440mA (quiescent current). The amplifier exhibits more than 25dB small signal gain. It is firstly dedicated to satcom applications and well suited for a wide range of microwave applications and systems.
The circuit is manufactured on a robust GaN-on-SiC HEMT process and is available in bare die form. The input and output are matched to 50Ω and the input integrates an ESD RF protection.
| Reference | RF Bandwidth (GHz) | Gain (dB) | IP3 (dBm) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||