GH10-10

Spotlight

Most recent publications on GH10 Technology

0.1μm-UMS GaN-on-SiC Technology: Qualification & Perspectives

Abstract: Abstract — UMS has developed a new generation of GaN-on SiC technology identified as GH10-10. Promising performance, good device robustness and reduced memory effect were achieved with a combination of process and device optimization. Large signal measurements were performed at 18 GHz, 30GHz, 45 GHz and 60 GHz. The results at 45 GHz have shown more than 46% of PAE, 11dB linear gain and 2.5 W.mm-1 output power. At 60 GHz, a maximum PAE of 31-33% is obtained. The nonlinear electrical model accuracy is proven with the HPA designed at Q-Band and showing promising results.

This paper has been presented at the ARMMS conference in Nov 2025.

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MMIC Power amplifiers and LNAs in 100-nm GaN on SiC European technology for Q/V
band VHTS and constellations.

Abstract: Semiconductors are critical to the national security of the European member states and to the functioning of the European economy.
III-V semiconductors like gallium nitride (GaN) are particularly of interest for space and telecom applications due to the very high
efficiency of these materials. The European project SGAN-Next is focused on developing a European GaN on SiC MMIC process for
high frequency operating devices (Q band and beyond) targeting flexible payloads for LEO/GEO applications. In this paper, first
designs of a medium (2W and 5W) and high-power amplifier (10W) for Q-band, as well as low noise amplifiers at V-band are presented.

This paper has been presented at the 2nd Space Microwave Week in May 2025

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GH10‑10 sets a new benchmark in high‑performance GaN HEMT technology, delivering exceptional power density, efficiency, and robustness for next‑generation RF systems.

Introduced in November 2025, this innovative platform combines UMS’s proven III‑V expertise with advanced process engineering to enable superior performance across demanding aerospace, defense, and broadband applications. GH10‑10 empowers designers to push system capabilities further—achieving higher output power, improved thermal behavior, and greater design flexibility in compact, reliable solutions.

UMS Unveils New GH10-10, 0.1-µm GaNTechnology:
A breakthrough in RF and Millimeter-Wave applications

United Monolithic Semiconductors (UMS) is proud to announce that its new GH10-10 GaN technology is now fully qualified and already opened in production mode, empowering our customers with high performance, fast time-to-market and greater competitive advantages.

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