News / Event

A new 10W wideband GaN HPA

The CHA7618-99F covers 5.5 to 18GHz with a high gain performance of 30dBm

 

 

This High Power Amplifier features 20% Power Added Efficiency and a small signal gain of 30dB.

 

 

This circuit is dedicated to numerous applications such as Defence: EW, Jammer, Test and Instrumentation and Microwave applications & systems (Radar and Communication).

 

 

It is designed on a 0.15µm GaN HEMT UMS proprietary technology.

 

Main characteristics:

  • Frequency range: 5.5-18GHz
  • Linear Gain: 30dB
  • Output Power (Pin 20dBm): 40dBm
  • PAE (Pin 20dBm): 20%
  • Return losses:        Input RL  >10dB
    Output RL >7dB
  • DC Bias: 18V@0.53A
  • Chip size: 5.8mmx3.48mmx0.07mm
 - Product