The CHA8611-99F is a GaN based 18W X-band High Power Amplifier, featuring a high PAE of 43% at Psat.
This circuit is designed for a wide range of applications including defense and commercial communication systems. This product is supplied as a bare die.
Main features:
| Frequency range: | 8.5-11GHz |
| PAE: | 43% @ Psat |
| Linear gain: | 24dB |
| Psat: | 18W |
| Biasing: | 25V@0.8A (quiescent) |
| Chip size: | 4.36×2.57×0.10mm |
It is manufactured using UMS proprietary 0.25µm gate length GaN pHEMT process.