CHZ180AaSEB - 180W L-Band HPA
Associated Gain (dB)
> 14
Frequency range (GHz)
1.2
Power (W)
200
Small signal Gain (dB)
20
1.4
DC Bias
VDS 45V@ID_Q 1.3A
PAE (%)
52
The CHZ180AaSEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band.
It is well suited for pulsed radar application.
The CHZ180AaSEB is proposed on a 0.5µm gate length GaN HEMT process. It is based on Quasi-MMIC technology.
It is available in a hermetic flange ceramic metal power package providing low parasitic and low thermal resistance.
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