CHZ015AaQEG - 15W L-Band Driver
Associated Gain (dB)
> 14
Frequency range (GHz)
1.2
Power (W)
15
Small signal Gain (dB)
17.2
1.4
DC Bias
VDS 45V@ID_Q 100mA
PAE (%)
> 55
Market
Aerospace, Defense and Instrumentation
The CHZ015AaQEG is an input matched packaged Gallium Nitride High Electron Mobility Transistor.
It allows broadband solutions for a variety of RF power applications in L-band. The circuit is well suited for pulsed radar application.
The CHZ015AaQEG is proposed on a 0.5µm gate length GaN HEMT process. It is based on Quasi MMIC technology.
It is supplied in RoHS compliant SMD package.
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