CHKA012bSYA - 130W Power Packaged Transistor
Operating Frequency (GHz)
Up to 6
Saturated Power (W)
130
Bias (mA)
600
Bias (V)
50
Glin (dB) @Freq (GHz)
19 @ 1.3
PAE (%) @Freq (GHz)
58 @ 1.3
Market
Aerospace, Defense and Instrumentation
The CHKA012bSYA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. This power bar offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as radar and telecommunication.
The CHKA012bSYA is developed on a 0.5µm gate length GaN HEMT process. It requires an external matching circuitry.
The CHKA012bSYA is supplied in an hermetic ceramic-metal flange power package, compliant with the RoHs N°2011/65 and REACH N°1907/2006 directives.
Our latest Products
Get a glimpse of our latest product releases.
