CHK9013-99F - 85W Power Transistor
Operating Frequency (GHz)
Up to 8
Saturated Power (W)
88
Bias (mA)
1100
Bias (V)
30
Glin (dB) @Freq (GHz)
18 @ 6
PAE (%) @Freq (GHz)
65 @ 6
Market
Aerospace, Defense and Instrumentation
| The CHK9013-99F is a 85W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telecommunication. The circuit is manufactured on a 0.25µm gate length GaN HEMT technology on SiC substrate. It is proposed in a bare die form and requires an external matching circuitry. |
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