CHK8201-SYA - 45W GaN packaged power bar
Operating Frequency (GHz)
22 @ 1.3
Saturated Power (W)
45
Bias (mA)
200
Bias (V)
50
Glin (dB) @Freq (GHz)
22 @ 1.3
PAE (%) @Freq (GHz)
55 @ 1.3
Market
Aerospace, Defense and Instrumentation
The CHK8201-SYA is an unmatched power bar microwave transistor, which integrates two CHK8101a99F power bars packaged together with individual access possible, that produces 45W of combined output power.
It is designed for a wide range of RF power applications up to 4 GHz. It is well suited for multi-purpose applications such as radar and telecommunication.
The applied GaN on SiC technology is a space evaluated HEMT process with 0.50 µm gate length. It requires an external matching circuitry.
It is supplied in a hermetic ceramic-metal flange power package, compliant with the RoHs N°2011/65 and REACH N°1907/2006 directives.
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