CHK8101-SYC - 15W Power Packaged Transistor
Operating Frequency (GHz)
19 @ 1.3
Saturated Power (W)
15
Bias (mA)
100
Bias (V)
50
Glin (dB) @Freq (GHz)
19 @ 1.3
PAE (%) @Freq (GHz)
65 @ 1.3
Market
Aerospace, Defense and Instrumentation
The CHK8101-SYC is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as space and telecommunication
The CHK8101-SYC is developed on a 0.5µm gate length GaN on SiC HEMT process. It requires an external matching circuitry.
The CHK8101-SYC is supplied in a hermetic ceramic-metal flange power package, compliant with the RoHs N°2011/65 and REACH N°1907/2006 directives.
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