CHK8015-99F - 16W Power Transistor
Operating Frequency (GHz)
17 @ 9
Saturated Power (W)
20
Bias (mA)
200
Bias (V)
30
Glin (dB) @Freq (GHz)
17 @ 9
PAE (%) @Freq (GHz)
50 @ 15
The CHK8015-99F is a 16W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications.
The circuit is manufactured with a 0.25µm gate length GaN HEMT technology on SiC substrate.
It is proposed in a bare die form and requires an external matching circuitry.
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