CHK8013-99F - 14W Power Transistor
Operating Frequency (GHz)
17 @ 6
Saturated Power (W)
14
Bias (mA)
180
Bias (V)
30
Glin (dB) @Freq (GHz)
17 @ 6
PAE (%) @Freq (GHz)
70 @ 6
Market
Aerospace, Defense and Instrumentation
The CHK8013-99F is a 14W Gallium Nitride High Electron Mobility Transistor.
This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telecommunication.
The circuit is manufactured on a 0.25µm gate length GaN HEMT technology on SiC substrate.
It is proposed in a bare die form and requires an external matching circuitry.
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