CHA8710a99F - 25W X Band HPA
Gain (dB)
28.5
Sat. Output Power (dBm)
44
Bias (mA)
750
Bias (V)
25
IP3 (dBm)
-
P-1dB OUT (dBm)
-
PAE (%)
44 @ Psat
RF Bandwidth (GHz) Max
10.5
RF Bandwidth (GHz) Min
8.5
Market
Aerospace, Defense and Instrumentation
The CHA8710a99F is a two stage High Power Amplifier operating between 8.5 and 10.5GHz and providing typically 25W of saturated output power and 44% of power added efficiency. It is designed for a wide range of applications, from military to commercial communication systems.
The circuit is manufactured with a GaN HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
The circuit is manufactured with a GaN HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
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