New
CHA8710-QDB - 25W X Band HPA
Gain (dB)
29.5
Sat. Output Power (dBm)
44
Bias (mA)
750
Bias (V)
30
IP3 (dBm)
-
P-1dB OUT (dBm)
-
PAE (%)
41 @ Psat
RF Bandwidth (GHz) Max
10.5
RF Bandwidth (GHz) Min
8.5
Market
Aerospace, Defense and Instrumentation
The CHA8710-QDB is a two stage High Power Amplifier operating between 8.5 and 10.5GHz and providing typically 25W of saturated output power and 41% of power added efficiency.
It is designed for a wide range of applications, from defense to commercial communication and radar systems.
The circuit is manufactured with a robust GaN HEMT process, via holes through the substrate, air bridges and electron beam gate lithography.
It is designed for a wide range of applications, from defense to commercial communication and radar systems.
The circuit is manufactured with a robust GaN HEMT process, via holes through the substrate, air bridges and electron beam gate lithography.
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