CHA8612-QDB - 18W X-Band HPA
Gain (dB)
26
Sat. Output Power (dBm)
43
Bias (mA)
680
Bias (V)
30
IP3 (dBm)
-
P-1dB OUT (dBm)
44
PAE (%)
42.5 @ Psat
RF Bandwidth (GHz) Max
11
RF Bandwidth (GHz) Min
7.9
Market
Aerospace, Defense and Instrumentation
The CHA8612-QDB is a two stage High Power Amplifier operating between 7.9 and 11GHz and providing typically 18W of saturated output power and 40% of Power Added Efficiency.
It is designed for a wide range of applications, from military to commercial radar and communication systems.
The circuit is manufactured with a GaN HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
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