New
CHA8454-99F - 10W 37.5-43.5GHz High Power Amplifier
Gain (dB)
24
Sat. Output Power (dBm)
40.5
Bias (mA)
540
Bias (V)
20
PAE (%)
25
RF Bandwidth (GHz) Max
43.5
RF Bandwidth (GHz) Min
37.5
Market
36-44GHz Chipset
The CHA8454-99F is a three stages High Power Amplifier operating between 37.5 and 43.5GHz and providing typically 10W of saturated output power and more than 24% of Power Added Efficiency. The typical power supply is 20V/540mA (quiescent current). Thanks to a low drain voltage biasing, the CHA8454-99F provides a junction temperature below 160°C, even in saturation.
The circuit is manufactured on a space evaluated GaN-on-SiC HEMT process and is available in bare die form.
It is firstly dedicated to space, military and telecom applications and well suited for a wide range of microwave applications and systems.
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