CHA8352-99F - 20W Ku Band HPA
Gain (dB)
25
Sat. Output Power (dBm)
43
Bias (mA)
500
Bias (V)
20
IP3 (dBm)
-
P-1dB OUT (dBm)
-
PAE (%)
45 @ 43dBm
RF Bandwidth (GHz) Max
12.75
RF Bandwidth (GHz) Min
10.7
Market
Aerospace, Defense and Instrumentation
The CHA8352-99F is a two-stage GaN High Power Amplifier in the frequency band 10.7-12.75GHz. This HPA typically provides 20W of output power associated to 45% of Power Added Efficiency. The small signal gain exhibits more than 25dB. The overall power supply is of 20V/0.5A (quiescent current).
This circuit is a very versatile amplifier for high performance systems.
The circuit is dedicated to space applications and well suited for a wide range of microwave applications and systems.
The part is developed on a robust 0.15µm gate length GaN on SiC HEMT process and is available as a bare die.
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