CHA8312-99F - 17W X-Band HPA
Gain (dB)
26
Sat. Output Power (dBm)
43
Bias (mA)
320
Bias (V)
20
IP3 (dBm)
-
P-1dB OUT (dBm)
-
PAE (%)
50 @ 23dBm
RF Bandwidth (GHz) Max
12
RF Bandwidth (GHz) Min
8
Market
Aerospace, Defense and Instrumentation
The CHA8312-99F is a two-stage GaN High Power Amplifier in the frequency band 8-12GHz. This HPA typically provides 17W of output power associated to 50% of Power Added Efficiency. The small signal gain exhibits more than 26dB. The overall power supply is of 20V / 320mA (quiescent current).
This circuit is a very versatile amplifier for high performance systems.
The circuit is dedicated to defence applications and well suited for a wide range of microwave applications and systems such as radar, test equipment and communication.
The part is developed on a robust 0.15µm gate length GaN HEMT process over SiC and is available as a bare die.
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