CHA8262-99F - 27.5 - 31.5 GHz 12W HPA
Gain (dB)
24
Sat. Output Power (dBm)
41
Bias (mA)
280
Bias (V)
20
PAE (%)
25
RF Bandwidth (GHz) Max
31.5
RF Bandwidth (GHz) Min
27.5
Market
Ka-band Chipset
The CHA8262-99F is three stages monolithic GaN High Power Amplifier reaching 12W Output Power over 27.5-31.5GHz bandwidth.
It offers high linearity performances and reachs more than 25% of Power Added Efficiency at saturation. The circuit is manufactured on a 0.15µm gate length GaN-on-SiC HEMT process and is available in bare die form.
It is well suited for SatCom uplink and 5G communication applications.
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