CHA8252-99F - 10W K Band HPA
Gain (dB)
31
Sat. Output Power (dBm)
41
Bias (mA)
300
Bias (V)
18
IP3 (dBm)
-
P-1dB OUT (dBm)
40.5
PAE (%)
35 @ Pin 16dBm
RF Bandwidth (GHz) Max
20.3
RF Bandwidth (GHz) Min
17.3
Market
13-18GHz & VSAT Ku Chipset
The CHA8252-99F is a three-stage GaN High Power Amplifier in the frequency band 17.3‑20.3GHz. This HPA typically provides 10W of output power associated to 35% of Power Added Efficiency. The small signal gain exhibits more than 31dB. The overall power supply is 18V/0.3A (quiescent current).
This circuit is a very versatile amplifier for high performance systems.
The circuit is dedicated to space applications and well suited for a wide range of microwave applications and systems.
The part is developed on a robust 0.15µm gate length GaN on SiC HEMT process and is available as a bare die.
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