CHA8212-99F - 25W X Band HPA
Gain (dB)
34
Sat. Output Power (dBm)
44
Bias (mA)
840
Bias (V)
28
IP3 (dBm)
-
P-1dB OUT (dBm)
-
PAE (%)
36 @ 7dB comp
RF Bandwidth (GHz) Min
8.5
RF Bandwidth (GHz) Max
11.5
Market
Aerospace, Defense and Instrumentation
The CHA8212-99F is a three-stage GaN High Power Amplifier in the frequency band 8.5-11.5GHz. This HPA typically provides 25W of output power associated to 36% of Power Added Efficiency. The small signal gain exhibits more than 30dB. The overall power supply is of 28V/0.84A (quiescent current).
This circuit is a very versatile amplifier for high performance systems.
The circuit is dedicated to defence applications and well suited for a wide range of microwave applications and systems.
The part is developed on a robust 0.25µm gate length GaN HEMT process and is available as a bare die.
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