New
CHA8154-99F - 7.25-7.75GHz High Power Amplifier
Gain (dB)
28.5
Sat. Output Power (dBm)
42.6
Bias (mA)
330
Bias (V)
28
PAE (%)
49
RF Bandwidth (GHz) Max
7.75
RF Bandwidth (GHz) Min
7.25
Market
C-band Chipset
The CHA8154-99F is a two-stage monolithic GaN Power Amplifier operating between 7.25 and 7.75GHz and typically providing 18W Output Power at 49% of Power Added Efficiency. This amplifier exhibits more than 6W linear Output Power associated to 17dBc NPR and 42% Power Added Efficiency. It also provides a typical small signal gain of 28.5dB.
This amplifier is well suited for radar and space communications as well as telecommunications.
The circuit is manufactured using a space evaluated, robust GaN-on-SiC HEMT process and is provided as a bare die for direct integration into hybrid circuits.
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