New

CHA8107-QCB - 4.5 – 6.8 GHz High Power Amplifier

Gain (dB)

Sat. Output Power (dBm)

Bias (mA)

315

Bias (V)

IP3 (dBm)

P-1dB OUT (dBm)

PAE (%)

RF Bandwidth (GHz) Max

6.8

RF Bandwidth (GHz) Min

4.5

Market

Aerospace, Defense and Instrumentation

The CHA8107–QCB is a two-stage GaN High Power Amplifier for the 4.5 – 6.8GHz frequency band. This HPA operates with a drain voltage from 14V to 24V. Depending on the applied drain voltage, this HPA provides between 8W and 20W of saturated output power associated with 58% Power Added Efficiency on average across the frequency band.

Designed for Radar application, it is also ideal for a wide range of microwave systems. The product is developed on a robust GaN-on-SiC HEMT process with humidity protection and is available in a QFN plastic package.