CHA8100-99F - X Band HBT HPA

Gain (dB)

18.5

Sat. Output Power (dBm)

Bias (mA)

2100

Bias (V)

IP3 (dBm)

P-1dB OUT (dBm)

PAE (%)

40 @ 3dB comp

RF Bandwidth (GHz) Max

10.5

RF Bandwidth (GHz) Min

Market

Aerospace, Defense and Instrumentation

The CHA8100-99F chip is a monolithic two-stage High Power Amplifier designed for X band applications. The HPA provides typically 11W output power, 40% power added efficiency and a high robustness on mismatched output. Moreover it includes:

an analogue biasing circuit that makes it less sensitive to spread and chip environment.
an integrated TTL interface that enables to switch the HPA with a current consumption lower than 1mA

The circuit is 100% DC and RF tested on wafer to ensure performance compliance.

This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridges.