CHA8054-99F - 20W X-Band HPA
Gain (dB)
27
Sat. Output Power (dBm)
43.6
Bias (mA)
900
Bias (V)
28
IP3 (dBm)
-
P-1dB OUT (dBm)
-
PAE (%)
50 @ 7dB comp
RF Bandwidth (GHz) Max
8.6
RF Bandwidth (GHz) Min
7.7
Market
Aerospace, Defense and Instrumentation
The CHA8054-99F is a two stage High Power Amplifier operating between 7.7 and 8.6GHz and typically providing 20W of saturated output power and 50% of Power Added Efficiency.
It is designed for a wide range of applications, from space, military to commercial communication systems.
The circuit is manufactured with a GaN HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is available in chip form.
Our latest Products
Get a glimpse of our latest product releases.
