CHA7618-99F - 10W Wide-Band HPA
Gain (dB)
30
Sat. Output Power (dBm)
40
Bias (mA)
530
Bias (V)
18
IP3 (dBm)
-
P-1dB OUT (dBm)
-
PAE (%)
20 @ 20dBm
RF Bandwidth (GHz) Min
5.5
RF Bandwidth (GHz) Max
18
Market
6-18GHz Chipset
The CHA7618-99F is a three-stage GaN High Power Amplifier in the frequency band 5.5-18GHz. This HPA typically provides 10W of Output Power associated to 20% of Power Added Efficiency. The circuit exhibits a small signal gain of more than 30dB. The overall power supply is of 18V/0.530A (quiescent current).
This circuit is a very versatile amplifier for high performance systems.
The circuit is dedicated to defence applications and well suited for a wide range of microwave applications and systems.
The part is developed on a robust 0.15µm gate length GaN HEMT process and is available as a bare die.
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