CHA7455-99F - 39-43.5GHz 9W HPA
Gain (dB)
29
Sat. Output Power (dBm)
39.5
Bias (mA)
240
Bias (V)
20
IP3 (dBm)
-
P-1dB OUT (dBm)
-
RF Bandwidth (GHz) Max
43.5
RF Bandwidth (GHz) Min
39
Market
36-44GHz Chipset
The CHA7455-99F is a four stages High Power Amplifier operating between 39 and 43.5GHz and providing typically 9W of saturated output power and 25 % of Power Added Efficiency.The typical power supply is 20V/240mA (quiescent current). Thanks to a low drain voltage biasing, the CHA7455-99F provides a junction temperature below 160°C, even in saturation.
The circuit is manufactured on a space qualified GaN-on-SiC HEMT process and is available in bare die form.
It is firstly dedicated to space, military and telecom applications and well suited for a wide range of microwave applications and systems.
The circuit is manufactured on a space qualified GaN-on-SiC HEMT process and is available in bare die form.
It is firstly dedicated to space, military and telecom applications and well suited for a wide range of microwave applications and systems.
Our latest Products
Get a glimpse of our latest product releases.
