CHA7250-QAB - 10-12.75GHz HPA
Gain (dB)
20
Sat. Output Power (dBm)
40
Bias (mA)
130
Bias (V)
20
IP3 (dBm)
-
P-1dB OUT (dBm)
-
PAE (%)
37 @ 40dBm
RF Bandwidth (GHz) Max
12.75
RF Bandwidth (GHz) Min
10
Market
13-18GHz & VSAT Ku Chipset
The CHA7250-QAB is a two stage monolithic GaN Power Amplifier exhibiting 10W saturated output power over 10-12.75GHz frequency range.
It features 37% Power Added Efficiency and a linear gain of 20dB.
The circuit is realized on 150nm Gallium Nitride on Silicon Carbide (AlGaN/GaN on SiC) technology.
It is designed for Point To Point Radio and is provided on low cost SMD RoHS compliant plastic package.
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