CHA7114-99F - X Band HPA
Gain (dB)
20
Sat. Output Power (dBm)
39.8
Bias (mA)
2000
Bias (V)
8
IP3 (dBm)
-
P-1dB OUT (dBm)
-
PAE (%)
42 @ 4dB comp
RF Bandwidth (GHz) Max
11.5
RF Bandwidth (GHz) Min
8.5
Market
Aerospace, Defense and Instrumentation
The CHA7114-99F is a monolithic two-stage GaAs High Power Amplifier designed for X band applications.
This device is manufactured using a UMS 0.25µm power pHEMT process, including, via holes through the substrate and air bridges.
To simplify the assembly process:
- The backside of the chip is both RF and DC grounded
- Bond pads and back side are gold plated for compatibility with eutectic die attach method and thermo-compression bonding process.
Our latest Products
Get a glimpse of our latest product releases.
