CHA6710-FAB - 5W X Band MPA
Gain (dB)
22.5
Sat. Output Power (dBm)
37
Bias (mA)
200
Bias (V)
25
IP3 (dBm)
-
P-1dB OUT (dBm)
-
PAE (%)
35 @ Psat
RF Bandwidth (GHz) Max
12.75
RF Bandwidth (GHz) Min
8
Market
Aerospace, Defense and Instrumentation
The CHA6710-FAB is a two stage Medium Power Amplifier operating between 8 and 12.75GHz. It typically provides 5W of saturated output power and 35% of Power Added Efficiency.
It is dedicated to radar frequency band and Space downlink Ku Band communication.
The circuit is manufactured with a GaN pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is proposed in a RoHS leadless surface mount hermetic metal ceramic 6x6mm² package, compliant SMD assembly tools.
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