CHA6551-99F - 17-24GHz Power Amplifier
Gain (dB)
22
Sat. Output Power (dBm)
32
Bias (mA)
880
Bias (V)
4
IP3 (dBm)
39
P-1dB OUT (dBm)
30
PAE (%)
25 @ Psat
RF Bandwidth (GHz) Max
24
RF Bandwidth (GHz) Min
17
The CHA6551-99F is a three stage monolithic GaAs high power circuit producing 1.6 Watt output power.
This product is highly linear, with possible gain control and integrates a power detector. ESD protections are included. It is designed for a wide range of applications: Space, military and automotive communication systems.
The circuit is manufactured with a pHEMT process, 0.15µm gate length.
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