CHA6282-QCB - 17.3-21.5GHz GaN Power Amplifier

Gain (dB)

Sat. Output Power (dBm)

Bias (mA)

260

Bias (V)

IP3 (dBm)

P-1dB OUT (dBm)

PAE (%)

28 @ Psat

RF Bandwidth (GHz) Max

21.5

RF Bandwidth (GHz) Min

17.3

Market

Aerospace, Defense and Instrumentation

CHA6282-QCB is a three-stage GaN High Power Amplifier in the frequency band 17.3-21.5GHz. This HPA typically provides 4W output power associated to 28% of Power Added Efficiency. The circuit exhibits a small signal gain higher than 30dB. The overall power supply is 18V/260mA.

The circuit is a very versatile amplifier for high performance systems.

The circuit is dedicated to Space applications and well suited for a wide range of microwave applications and systems.

The product is developed on a robust 0.15µm gate length GaN on SiC HEMT process and is provided on low cost SMD RoHS compliant plastic package.