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CHA6154-99F - 7.25-7.75GHz 3W Power Amplifier

Gain (dB)
36.5
Sat. Output Power (dBm)
34.5
Bias (mA)
70
Bias (V)
28
IP3 (dBm)
-
P-1dB OUT (dBm)
-
PAE (%)
43 @ Psat
RF Bandwidth (GHz) Max
7.75
RF Bandwidth (GHz) Min
7.25
Market
6-8.5GHz Chipset

The CHA6154-99F is a three-stage monolithic GaN Medium Power Amplifier operating between 7.25 and 7.75GHz and typically providing 2.8W Output Power at 43% of Power Added Efficiency. This amplifier exhibits more than 1W linear Output Power associated to 17dBc NPR and 33% Power Added Efficiency. It also provides a typical small signal gain of 36.5dB. This amplifier is well suited for radar and space communications as well as telecommunications. It can be used as a Driver or a Power Amplifier.

The circuit is manufactured using a space evaluated, robust GaN-on-SiC HEMT process and is provided as a bare die for direct integration into hybrid circuits.

Technical documentation :