CHA5266-FAB - 10-16GHz Medium Power Amplifier
Gain (dB)
24
Sat. Output Power (dBm)
27.5
Bias (mA)
320
Bias (V)
5
IP3 (dBm)
35.5
P-1dB OUT (dBm)
26
RF Bandwidth (GHz) Max
16
RF Bandwidth (GHz) Min
10
The CHA5266-FAB is a three stage monolithic GaAs medium power amplifier in leadless surface mount hermetic metal ceramic 6x6mm² package.
It is designed for a wide range of applications, from military to commercial communication systems.
The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is supplied in RoHS compliant SMD package.
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