CHA5014-99F - X-Band HBT Driver Amplifier
Gain (dB)
20
Sat. Output Power (dBm)
30
Bias (mA)
230
Bias (V)
8.5
IP3 (dBm)
-
P-1dB OUT (dBm)
29
RF Bandwidth (GHz) Max
11
RF Bandwidth (GHz) Min
8.5
Market
Aerospace, Defense and Instrumentation
The CHA5014-99F chip is a monolithic two-stage medium power amplifier designed for X band applications. This amplifier is relevant for systems that require an output power weakly sensitive to temperature.
This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridges. A nitride layer protects the transistors and the passive components.
A special control circuit is implemented to stabilize the output power in temperature.
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