CHA2157-99F - 55-60 Low Noise / Medium Power Amplifier
Gain (dB)
10
Gain Flatness (+/-dB)
1
Bias (mA)
80
Bias (V)
3.3
Noise Figure (dB)
3.5
P-1dB OUT (dBm)
15
RF Bandwidth (GHz) Max
60
RF Bandwidth (GHz) Min
55
Market
46GHz, V-Band & E-Band
The CHA2157-99F is a two stage Low Noise and Medium Power Amplifier. The backside of the chip is both RF and DC grounded. This helps simplify the assembly process.
It is designed for a wide range of applications, from military to commercial communication systems.
The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is available in chip form.
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