CHA2066-99F - 10-16GHz LNA

Gain (dB)
16
Gain Flatness (+/-dB)
0.5
Bias (mA)
50
Bias (V)
4
Noise Figure (dB)
2
P-1dB OUT (dBm)
10
RF Bandwidth (GHz) Max
16
RF Bandwidth (GHz) Min
10
The CHA2066-99F is a two-stage wide band monolithic Low Noise Amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form.

Technical documentation :