CHA1010-99F - 7-11GHz LNA

Gain (dB)
32
Gain Flatness (+/-dB)
1.1
Bias (mA)
30
Bias (V)
5
Noise Figure (dB)
1
P-1dB OUT (dBm)
5.5
RF Bandwidth (GHz) Max
11
RF Bandwidth (GHz) Min
7
Market
Aerospace, Defense and Instrumentation
The CHA1010-99F is a monolithic three-stage wide-band Low Noise Amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured using a pHEMT process, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.

Technical documentation :