Datasheet Download| Reference | RF Bandwidth (GHz) | Gain (dB) | IP3 (dBm) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||
The CHA6362-QXG is a three stage monolithic GaAs high power circuit producing 2.5 Watt output power. It integrates a power detector and allows gain control. ESD protections are included.
It is designed for Point To Point Radio or K band Sat- Com application.
The circuit is manufactured with a pHEMT process, 0.15µm gate length.
It is supplied in RoHS compliant SMD package.
| Reference | RF Bandwidth (GHz) | Gain (dB) | IP3 (dBm) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | PAE (%) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||