Datasheet Download| Reference | RF Bandwidth (GHz) | Gain (dB) | IP3 (dBm) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||
The CHA5115-99F is a monolithic two-stage GaAs medium power amplifier designed for X band applications.
The MPA provides typically 29dBm output power associated to 39% power added efficiency at 3dB gain compression.
This device is manufactured using 0.25µm Power pHEMT process, including, via holes through the substrate and air bridges.
It is available in chip form.
| Reference | RF Bandwidth (GHz) | Gain (dB) | IP3 (dBm) | P-1dB OUT (dBm) | Sat. Output Power (dBm) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||