Datasheet Download| Reference | RF Bandwidth (GHz) | Gain (dB) | Gain Flatness (+/-dB) | Noise Figure (dB) | P-1dB OUT (dBm) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||
The CHA3666-FAB is a two-stage self biased wide band monolithic Low Noise Amplifier.
The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is proposed in leadless surface mount hermetic metal ceramic 6x6mm² package. The overall power supply is of 4V/80mA.
The circuit is dedicated to space applications and also well suited for a wide range of microwave and millimetre wave applications and systems.
| Reference | RF Bandwidth (GHz) | Gain (dB) | Gain Flatness (+/-dB) | Noise Figure (dB) | P-1dB OUT (dBm) | Bias (mA) | Bias (V) | Case | |
|---|---|---|---|---|---|---|---|---|---|
| min | max | ||||||||